| Anzahl | Preis |
|---|---|
| 1+ | 7.83 EUR |
| 10+ | 7.04 EUR |
| 100+ | 5.77 EUR |
| 500+ | 4.89 EUR |
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Technische Details TRS10E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 10A TO220-2L, Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 36pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max).
Weitere Produktangebote TRS10E65F,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TRS10E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 10A TO220-2LSupplier Device Package: TO-220-2L Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 36pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) |
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