TRS10H120H,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.76 EUR |
| 30+ | 9.76 EUR |
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Technische Details TRS10H120H,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 38A TO2472L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1148pF @ 1V, 1MHz, Current - Average Rectified (Io): 38A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote TRS10H120H,S1Q nach Preis ab 8.17 EUR bis 15.01 EUR
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TRS10H120H,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes RECT 1200V 10A SBD |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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