| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.83 EUR |
| 10+ | 12.42 EUR |
| 120+ | 11.27 EUR |
| 510+ | 11.1 EUR |
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Technische Details TRS10N120HB,S1Q Toshiba
Description: DIODE ARRAY SIC 1200V 18A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote TRS10N120HB,S1Q nach Preis ab 11.44 EUR bis 17.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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TRS10N120HB,S1Q | Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 1200V 18A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TRS10N120HB,S1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 18A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 18A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.34 EUR |
| 30+ | 11.44 EUR |