| Anzahl | Preis |
|---|---|
| 1+ | 12.46 EUR |
| 10+ | 10.44 EUR |
| 120+ | 9.47 EUR |
| 510+ | 9.33 EUR |
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Technische Details TRS10N120HB,S1Q Toshiba
Description: DIODE ARRAY SIC 1200V 18A TO-247, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 18A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote TRS10N120HB,S1Q nach Preis ab 9.61 EUR bis 14.57 EUR
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TRS10N120HB,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 1200V 18A TO-247Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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