auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.46 EUR |
| 10+ | 10.44 EUR |
| 120+ | 9.47 EUR |
| 510+ | 9.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TRS10N120HB,S1Q Toshiba
Description: DIODE ARRAY SIC 1200V 18A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote TRS10N120HB,S1Q nach Preis ab 9.61 EUR bis 14.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TRS10N120HB,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 1200V 18A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|