TRS10V65H,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 SIC-SBD 650V 10A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.21 EUR |
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Technische Details TRS10V65H,LQ Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 10A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 649pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote TRS10V65H,LQ nach Preis ab 2.23 EUR bis 6.34 EUR
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TRS10V65H,LQ | Hersteller : Toshiba |
Schottky Diodes & Rectifiers G3 SiC-SBD 650V 10A DFN8x8 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS10V65H,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 10A DFN8X8 Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 649pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
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