TRS12E65F,S1Q Toshiba Semiconductor and Storage

Description: DIODE SIL CARB 650V 12A TO220-2L, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 65pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 90 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A.