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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.85 EUR |
| 10+ | 3.20 EUR |
| 100+ | 2.50 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 1.72 EUR |
| 5000+ | 1.68 EUR |
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Technische Details TRS12E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 12A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 65pF @ 650V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 90 µA @ 650 V.
Weitere Produktangebote TRS12E65F,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TRS12E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 650V 12A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 65pF @ 650V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
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