TRS12E65H,S1Q Toshiba
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.35 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.63 EUR |
| 250+ | 3.41 EUR |
| 500+ | 3.22 EUR |
| 1000+ | 2.75 EUR |
| 2500+ | 2.59 EUR |
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Technische Details TRS12E65H,S1Q Toshiba
Description: G3 SIC-SBD 650V 12A TO-220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 778pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
Weitere Produktangebote TRS12E65H,S1Q nach Preis ab 3.57 EUR bis 5.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| TRS12E65H,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 SIC-SBD 650V 12A TO-220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 778pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V |
auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) |
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