TRS12N65FB,S1Q
Produktcode: 188826
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Lieblingsprodukt
Hersteller:
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
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Weitere Produktangebote TRS12N65FB,S1Q nach Preis ab 5.87 EUR bis 13.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TRS12N65FB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 650V 6A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS12N65FB,S1Q | Toshiba |
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TRS12N65FB,S1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.08 EUR |
| 30+ | 6.26 EUR |
| TRS12N65FB,S1Q |
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Hersteller: Toshiba
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.45 EUR |
| 10+ | 7.72 EUR |
| 120+ | 6.45 EUR |
| 510+ | 5.87 EUR |


