auf Bestellung 4836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.64 EUR |
| 250+ | 3.45 EUR |
| 500+ | 3.24 EUR |
| 1000+ | 2.96 EUR |
| 2500+ | 2.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TRS12V65H,LQ Toshiba
Description: G3 SIC-SBD 650V 12A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 778pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
Weitere Produktangebote TRS12V65H,LQ nach Preis ab 2.57 EUR bis 5.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TRS12V65H,LQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 SIC-SBD 650V 12A DFN8X8Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 778pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| TRS12V65H,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 12A DFN8X8 Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 778pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V |
auf Bestellung 4962 Stücke: Lieferzeit 10-14 Tag (e) |
|