TRS12V65H,LQ

TRS12V65H,LQ Toshiba Semiconductor and Storage


TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.95 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TRS12V65H,LQ Toshiba Semiconductor and Storage

Description: DIODE SIL CARB 650V 12A 4DFNEP, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 778pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.

Weitere Produktangebote TRS12V65H,LQ nach Preis ab 2.60 EUR bis 6.35 EUR

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TRS12V65H,LQ TRS12V65H,LQ Hersteller : Toshiba datasheet_en_20230410-3223228.pdf Schottky Diodes & Rectifiers G3 SiC-SBD 650V 12A DFN8x8
auf Bestellung 4836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.37 EUR
10+4.52 EUR
100+3.64 EUR
250+3.45 EUR
500+3.24 EUR
1000+2.96 EUR
2500+2.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TRS12V65H,LQ TRS12V65H,LQ Hersteller : Toshiba Semiconductor and Storage TRS12V65H_datasheet_en_20230410.pdf?did=152095&prodName=TRS12V65H Description: DIODE SIL CARB 650V 12A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 4304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.35 EUR
10+4.13 EUR
100+3.68 EUR
500+3.61 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH