Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TRS16N65FB,S1Q

TRS16N65FB,S1Q Toshiba Semiconductor and Storage

Name: TRS16N65FB,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 12338386-3
Price: 9.58 EUR
Availability: InStock

Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V

auf Bestellung 238 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
2+	14.09 EUR
30+	11.17 EUR
120+	9.58 EUR

Mindestbestellmenge: 2

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Technische Details TRS16N65FB,S1Q Toshiba Semiconductor and Storage

Description: DIODE ARR SIC SCHOTT 650V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 8A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.