TRS16N65FB,S1Q Toshiba
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.09 EUR |
| 10+ | 8.27 EUR |
| 120+ | 6.42 EUR |
| 510+ | 5.47 EUR |
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Technische Details TRS16N65FB,S1Q Toshiba
Description: DIODE ARRAY SIC 650V 8A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 8A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote TRS16N65FB,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TRS16N65FB,S1Q | Hersteller : Toshiba |
 Rectifier Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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TRS16N65FB,S1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 650V 8A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |