auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.24 EUR |
| 10+ | 17.83 EUR |
| 120+ | 13.78 EUR |
| 270+ | 13.43 EUR |
| 1020+ | 13.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TRS20N120HB,S1Q Toshiba
Description: DIODE ARRAY SIC 1200V 32A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 32A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote TRS20N120HB,S1Q nach Preis ab 15.39 EUR bis 20.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TRS20N120HB,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARRAY SIC 1200V 32A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 32A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|