TRS20N65FB,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.29 EUR |
| 30+ | 7.79 EUR |
| 120+ | 6.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TRS20N65FB,S1Q Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 10A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote TRS20N65FB,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TRS20N65FB,S1Q | Hersteller : Toshiba |
Rectifier Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
|
|
TRS20N65FB,S1Q | Hersteller : Toshiba |
Rectifier Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
 |
TRS20N65FB,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes RECT 650V 10A RDL SIC SKY |
Produkt ist nicht verfügbar |