Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TRS20N65FB,S1Q
TRS20N65FB,S1Q

TRS20N65FB,S1Q Toshiba Semiconductor and Storage

Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.16 EUR
30+ 10.14 EUR
Mindestbestellmenge: 2
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Technische Details TRS20N65FB,S1Q Toshiba Semiconductor and Storage

Description: DIODE ARR SIC SCHOT 650V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.

Weitere Produktangebote TRS20N65FB,S1Q nach Preis ab 8.19 EUR bis 15.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TRS20N65FB,S1Q TRS20N65FB,S1Q Hersteller : Toshiba TRS20N65FB_datasheet_en_20200703-1891860.pdf Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE
auf Bestellung 85 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.11 EUR
10+ 12.06 EUR
120+ 10.79 EUR
270+ 10.76 EUR
510+ 9.49 EUR
1020+ 8.19 EUR
Mindestbestellmenge: 4