auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.00 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.68 EUR |
| 5000+ | 0.66 EUR |
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Technische Details TRS2E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 2A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote TRS2E65F,S1Q nach Preis ab 1.42 EUR bis 2.96 EUR
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TRS2E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 2A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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