| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.68 EUR |
| 5000+ | 0.66 EUR |
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Technische Details TRS2E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 2A TO220-2L, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote TRS2E65F,S1Q nach Preis ab 1.42 EUR bis 2.96 EUR
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TRS2E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 2A TO220-2LCurrent - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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