TRS2E65H,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.40 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.48 EUR |
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Technische Details TRS2E65H,S1Q Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 2A TO-220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 135pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote TRS2E65H,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TRS2E65H,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L |
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