auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.62 EUR |
| 10+ | 19.17 EUR |
| 25+ | 17.85 EUR |
| 50+ | 17.05 EUR |
| 100+ | 16.33 EUR |
| 250+ | 15.54 EUR |
| 500+ | 14.85 EUR |
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Technische Details TRS30H120H,S1Q Toshiba
Description: 1200 V/30 A SIC SCHOTTKY BARRIER, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3205pF @ 1V, 1MHz, Current - Average Rectified (Io): 83A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Weitere Produktangebote TRS30H120H,S1Q nach Preis ab 14.64 EUR bis 23.78 EUR
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TRS30H120H,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: 1200 V/30 A SIC SCHOTTKY BARRIERPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3205pF @ 1V, 1MHz Current - Average Rectified (Io): 83A Supplier Device Package: TO-247-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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