TRS30N120HB,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.97 EUR |
| 30+ | 14.77 EUR |
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Technische Details TRS30N120HB,S1Q Toshiba Semiconductor and Storage
Description: 1200V30A SIC SCHOTTKY BARR DIODE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 41A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote TRS30N120HB,S1Q nach Preis ab 17.71 EUR bis 23.99 EUR
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TRS30N120HB,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes 1200 V/30 A SiC Schottky Barrier Diode, TO-247 |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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