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TRS40H120H,S1Q

TRS40H120H,S1Q Toshiba


TRS40H120H_datasheet_en_20240903-3536858.pdf Hersteller: Toshiba
SiC Schottky Diodes 1200 V/40 A SiC Schottky Barrier Diode, TO-247-2L
auf Bestellung 45 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.21 EUR
10+23.85 EUR
25+22.37 EUR
50+21.51 EUR
100+20.68 EUR
250+19.69 EUR
500+18.87 EUR
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Technische Details TRS40H120H,S1Q Toshiba

Description: 1200 V/40 A SIC SCHOTTKY BARRIER, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 4368pF @ 1V, 1MHz, Current - Average Rectified (Io): 102A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A, Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TRS40H120H,S1Q TRS40H120H,S1Q Hersteller : Toshiba Semiconductor and Storage TRS40H120H_datasheet_en_20240903.pdf?did=158289&prodName=TRS40H120H Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.76 EUR
30+18.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH