TRS40H120H,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
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Technische Details TRS40H120H,S1Q Toshiba Semiconductor and Storage
Description: 1200 V/40 A SIC SCHOTTKY BARRIER, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 4368pF @ 1V, 1MHz, Current - Average Rectified (Io): 102A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A, Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV.
Weitere Produktangebote TRS40H120H,S1Q nach Preis ab 18.62 EUR bis 31.31 EUR
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TRS40H120H,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W |
auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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