| Anzahl | Preis |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 1.7 EUR |
| 5000+ | 1.66 EUR |
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Technische Details TRS4E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 4A TO220-2L, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 16pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote TRS4E65F,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TRS4E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 4A TO220-2LCurrent - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 16pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
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