TRS4V65H,LQ

TRS4V65H,LQ Toshiba Semiconductor and Storage


TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.27 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TRS4V65H,LQ Toshiba Semiconductor and Storage

Description: G3 SIC-SBD 650V 4A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 263pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A, Current - Reverse Leakage @ Vr: 55 µA @ 650 V.

Weitere Produktangebote TRS4V65H,LQ nach Preis ab 1.38 EUR bis 4.22 EUR

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TRS4V65H,LQ TRS4V65H,LQ Hersteller : Toshiba TRS4V65H_datasheet_en_20230621-3223169.pdf Schottky Diodes & Rectifiers G3 SiC-SBD 650V 4A DFN8x8
auf Bestellung 4921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.03 EUR
10+2.52 EUR
100+2.02 EUR
2500+1.72 EUR
10000+1.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TRS4V65H,LQ TRS4V65H,LQ Hersteller : Toshiba Semiconductor and Storage TRS4V65H_datasheet_en_20230621.pdf?did=152109&prodName=TRS4V65H Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.72 EUR
100+1.87 EUR
500+1.50 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH