TRS6A65F,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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Technische Details TRS6A65F,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F-2L, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
Weitere Produktangebote TRS6A65F,S1Q nach Preis ab 3.25 EUR bis 8.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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TRS6A65F,S1Q | Toshiba |
 SiC Schottky Diodes RECT 650V 6A TO-220F-2L |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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| TRS6A65F,S1Q |
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Hersteller: Toshiba
SiC Schottky Diodes RECT 650V 6A TO-220F-2L
SiC Schottky Diodes RECT 650V 6A TO-220F-2L
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.98 EUR |
| 50+ | 5.32 EUR |
| 100+ | 3.88 EUR |
| 250+ | 3.83 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.25 EUR |