TRS6A65F,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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Technische Details TRS6A65F,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220F-2L, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
Weitere Produktangebote TRS6A65F,S1Q nach Preis ab 2.73 EUR bis 7.55 EUR
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TRS6A65F,S1Q | Hersteller : Toshiba |
 SiC Schottky Diodes RECT 650V 6A TO-220F-2L |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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