TRS6A65F,S1Q

TRS6A65F,S1Q Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 6 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.86 EUR
Mindestbestellmenge: 4
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Technische Details TRS6A65F,S1Q Toshiba Semiconductor and Storage

Description: DIODE SIL CARBIDE 650V 6A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220F-2L, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.

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TRS6A65F,S1Q TRS6A65F,S1Q Hersteller : Toshiba TRS6A65F_datasheet_en_20200928-1839560.pdf Schottky Diodes & Rectifiers DIODE
auf Bestellung 100 Stücke:
Lieferzeit 14-28 Tag (e)