auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.16 EUR |
| 10+ | 3.87 EUR |
| 25+ | 3.82 EUR |
| 50+ | 3.15 EUR |
| 100+ | 2.85 EUR |
| 250+ | 2.73 EUR |
| 500+ | 2.27 EUR |
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Technische Details TRS6E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 6A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Weitere Produktangebote TRS6E65F,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TRS6E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 6A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 22pF @ 650V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
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