| Anzahl | Preis |
|---|---|
| 1+ | 5.16 EUR |
| 10+ | 3.87 EUR |
| 25+ | 3.82 EUR |
| 50+ | 3.15 EUR |
| 100+ | 2.85 EUR |
| 250+ | 2.73 EUR |
| 500+ | 2.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TRS6E65F,S1Q Toshiba
Description: DIODE SIL CARB 650V 6A TO220-2L, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 22pF @ 650V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote TRS6E65F,S1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TRS6E65F,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARB 650V 6A TO220-2LCurrent - Reverse Leakage @ Vr: 30 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 22pF @ 650V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |