TRS6V65H,LQ

TRS6V65H,LQ Toshiba Semiconductor and Storage


TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Hersteller: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.60 EUR
Mindestbestellmenge: 2500
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Technische Details TRS6V65H,LQ Toshiba Semiconductor and Storage

Description: G3 SIC-SBD 650V 6A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 392pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.

Weitere Produktangebote TRS6V65H,LQ nach Preis ab 1.66 EUR bis 4.98 EUR

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TRS6V65H,LQ TRS6V65H,LQ Hersteller : Toshiba datasheet_en_20230410-3223209.pdf SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.10 EUR
10+2.82 EUR
100+2.02 EUR
500+1.69 EUR
1000+1.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TRS6V65H,LQ TRS6V65H,LQ Hersteller : Toshiba Semiconductor and Storage TRS6V65H_datasheet_en_20230410.pdf?did=152117&prodName=TRS6V65H Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.24 EUR
100+2.24 EUR
500+1.82 EUR
1000+1.68 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH