TRS8V65H,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 4+ | 5.35 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.17 EUR |
| 1000+ | 2.01 EUR |
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Technische Details TRS8V65H,LQ Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 520pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A, Current - Reverse Leakage @ Vr: 90 µA @ 650 V.
Weitere Produktangebote TRS8V65H,LQ nach Preis ab 2.52 EUR bis 6.86 EUR
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TRS8V65H,LQ | Hersteller : Toshiba |
SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8 |
auf Bestellung 2275 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS8V65H,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 520pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
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