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TRS8V65H,LQ

TRS8V65H,LQ Toshiba

datasheet_en_20230410-3223177.pdf Hersteller: Toshiba
Schottky Diodes & Rectifiers G3 SiC-SBD 650V 8A DFN8x8
auf Bestellung 4943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.54 EUR
10+ 3.78 EUR
100+ 3.04 EUR
2500+ 2.59 EUR
10000+ 2.53 EUR
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Technische Details TRS8V65H,LQ Toshiba

Description: G3 SIC-SBD 650V 8A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 520pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A, Current - Reverse Leakage @ Vr: 90 µA @ 650 V.

Weitere Produktangebote TRS8V65H,LQ nach Preis ab 2.01 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TRS8V65H,LQ Hersteller : Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.01 EUR
Mindestbestellmenge: 2500
TRS8V65H,LQ Hersteller : Toshiba Semiconductor and Storage TRS8V65H_datasheet_en_20230410.pdf?did=152125&prodName=TRS8V65H Description: G3 SIC-SBD 650V 8A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 3.7 EUR
100+ 2.95 EUR
500+ 2.49 EUR
1000+ 2.12 EUR
Mindestbestellmenge: 4
TRS8V65H,LQ TRS8V65H,LQ Hersteller : Toshiba docget.pdf Diode Schottky SiC 650V 23A 4-Pin DFN EP T/R
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