| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.78 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.39 EUR |
| 2500+ | 1.8 EUR |
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Technische Details TRS8V65H,LQ Toshiba
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 520pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 4-DFN-EP (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A, Current - Reverse Leakage @ Vr: 90 µA @ 650 V.
Weitere Produktangebote TRS8V65H,LQ nach Preis ab 2.39 EUR bis 6.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TRS8V65H,LQ | Toshiba Semiconductor and Storage |
 Description: DIODE SIL CARBIDE 650V 8A 4DFNEPPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 520pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TRS8V65H,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.37 EUR |
| 10+ | 4.24 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.39 EUR |