Produkte > TAIWAN SEMICONDUCTOR CORPORATION > TS10P06GHC2G
TS10P06GHC2G

TS10P06GHC2G Taiwan Semiconductor Corporation

TS10P01G%20SERIES_L2203.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
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Technische Details TS10P06GHC2G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1P 800V 10A TS-6P, Current - Average Rectified (Io): 10 A, Voltage - Peak Reverse (Max): 800 V, Grade: Automotive, Supplier Device Package: TS-6P, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, TS-6P, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A.