TSG65N190CR RVG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 650V, 11A, PDFN56, E-MODE GAN TR
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 2+ | 14.68 EUR |
| 10+ | 10.09 EUR |
| 100+ | 8.22 EUR |
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Technische Details TSG65N190CR RVG Taiwan Semiconductor Corporation
Category: SMD N channel transistors, Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56, Type of transistor: N-JFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: HEMT, Drain-source voltage: 650V, Drain current: 11A, Pulsed drain current: 19A, Case: PDFN56, Gate-source voltage: -10...7V, On-state resistance: 0.19Ω, Mounting: SMD, Gate charge: 2.2nC, Kind of package: tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Weitere Produktangebote TSG65N190CR RVG nach Preis ab 7.09 EUR bis 14.85 EUR
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TSG65N190CR RVG | Hersteller : Taiwan Semiconductor |
GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor |
auf Bestellung 2998 Stücke: Lieferzeit 10-14 Tag (e) |
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TSG65N190CR RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: 650V, 11A, PDFN56, E-MODE GAN TR Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| TSG65N190CR RVG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN56 Gate-source voltage: -10...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |