TSM020NM10TL RAG

TSM020NM10TL RAG Taiwan Semiconductor Corporation


pdf.php?pn=TSM020NM10TL Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 300A, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11246 pF @ 50 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.17 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM020NM10TL RAG Taiwan Semiconductor Corporation

Description: 100V, 300A, SINGLE, N-CHANNEL LO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TOLLA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11246 pF @ 50 V.

Weitere Produktangebote TSM020NM10TL RAG nach Preis ab 4.51 EUR bis 10.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TSM020NM10TL RAG TSM020NM10TL RAG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TSM020NM10TL Description: 100V, 300A, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11246 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+6.9 EUR
100+5.11 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TSM020NM10TL RAG TSM020NM10TL RAG Hersteller : Taiwan Semiconductor pdf.php?pn=TSM020NM10TL MOSFETs 100V, 300A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.44 EUR
10+7.62 EUR
100+6.18 EUR
500+5.49 EUR
1000+5.32 EUR
2000+4.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH