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TSM038N03PQ33 RGG

TSM038N03PQ33 RGG Taiwan Semiconductor Corporation

TSM038N03PQ33_B1610.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.39 EUR
10000+0.38 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM038N03PQ33 RGG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 78A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V.

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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Hersteller : Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
auf Bestellung 15312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.02 EUR
100+0.70 EUR
500+0.55 EUR
1000+0.49 EUR
2000+0.46 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TSM038N03PQ33 RGG TSM038N03PQ33 RGG Hersteller : Taiwan Semiconductor TSM038N03PQ33_B1610.pdf MOSFET 30V, 78A, Single N-Channel Power MOSFET
auf Bestellung 35095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.80 EUR
10+2.32 EUR
100+1.85 EUR
500+1.56 EUR
1000+1.26 EUR
5000+1.12 EUR
Mindestbestellmenge: 2
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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Hersteller : Taiwan Semiconductor 958055845261667tsm038n03pq33_b1610.pdf Trans MOSFET N-CH 30V 78A 8-Pin PDFN EP T/R
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