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TSM042N03CS RLG

TSM042N03CS RLG TAIWAN SEMICONDUCTOR

TSM042N03CS-RLG.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
On-state resistance: 6mΩ
Mounting: SMD
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOP8
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
61+1.39 EUR
Mindestbestellmenge: 61 Stücke
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Technische Details TSM042N03CS RLG TAIWAN SEMICONDUCTOR

Description: MOSFET N-CHANNEL 30V 30A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.

Weitere Produktangebote TSM042N03CS RLG nach Preis ab 0.61 EUR bis 3.45 EUR

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TSM042N03CS RLG TSM042N03CS RLG Taiwan Semiconductor Corporation TSM042N03CS_A14.pdf Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
5000+1.5 EUR
Mindestbestellmenge: 2500 Stücke
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TSM042N03CS RLG TSM042N03CS RLG Taiwan Semiconductor TSM042N03CS_A14.pdf MOSFETs 30V, 30A, Single N-Channel Power MOSFET
auf Bestellung 8158 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.78 EUR
10+1.73 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.76 EUR
2500+0.69 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM042N03CS RLG TSM042N03CS RLG Taiwan Semiconductor Corporation TSM042N03CS_A14.pdf Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 14177 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.45 EUR
10+2.87 EUR
100+2.28 EUR
500+1.93 EUR
1000+1.64 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM042N03CS RLG TSM042N03CS_A14.pdf
TSM042N03CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.56 EUR
5000+1.5 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM042N03CS RLG TSM042N03CS_A14.pdf
TSM042N03CS RLG
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 30A, Single N-Channel Power MOSFET
auf Bestellung 8158 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.78 EUR
10+1.73 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.76 EUR
2500+0.69 EUR
5000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM042N03CS RLG TSM042N03CS_A14.pdf
TSM042N03CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 14177 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.45 EUR
10+2.87 EUR
100+2.28 EUR
500+1.93 EUR
1000+1.64 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH