TSM042N03CS RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM042N03CS RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.
Weitere Produktangebote TSM042N03CS RLG nach Preis ab 0.75 EUR bis 4.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM042N03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 30A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 14282 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TSM042N03CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Case: SOP8 Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 6mΩ Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
TSM042N03CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Case: SOP8 Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 6mΩ Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 30V |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
TSM042N03CS RLG | Hersteller : Taiwan Semiconductor |
MOSFET 30V, 30A, Single N-Channel Power MOSFET |
auf Bestellung 9994 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
TSM042N03CS RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 30V 30A 8-Pin SOP T/R |
Produkt ist nicht verfügbar |