Technische Details TSM048NB06LCR RLG Taiwan Semiconductor
Description: MOSFET N-CH 60V 16A/107A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V, Power Dissipation (Max): 3.1W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V.
Weitere Produktangebote TSM048NB06LCR RLG nach Preis ab 0.98 EUR bis 4.65 EUR
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TSM048NB06LCR RLG | Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM048NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/107A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM048NB06LCR RLG | Taiwan Semiconductor |
Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 105nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM048NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/107A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V |
auf Bestellung 4003 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM048NB06LCR RLG |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R
Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.34 EUR |
| 5000+ | 1.23 EUR |
| TSM048NB06LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.37 EUR |
| TSM048NB06LCR RLG |
|
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R
Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.2 EUR |
| 106+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.05 EUR |
| 5000+ | 0.98 EUR |
| TSM048NB06LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.21 EUR |
| 30+ | 2.89 EUR |
| 32+ | 2.65 EUR |
| TSM048NB06LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
auf Bestellung 4003 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.65 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.5 EUR |