TSM048NM15TL RAG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 150V, 224A, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.74 EUR |
| 10+ | 7.26 EUR |
| 100+ | 5.44 EUR |
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Technische Details TSM048NM15TL RAG Taiwan Semiconductor Corporation
Description: 150V, 224A, SINGLE, N-CHANNEL LO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 224A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TOLLA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V.
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TSM048NM15TL RAG | Hersteller : Taiwan Semiconductor Corporation |
Description: 150V, 224A, SINGLE, N-CHANNEL LO Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 224A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TOLLA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V |
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