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TSM055N03EPQ56 RLG

TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation

TSM055N03EPQ56_B1710.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
17+1.06 EUR
Mindestbestellmenge: 15
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Technische Details TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 80A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V.

Weitere Produktangebote TSM055N03EPQ56 RLG nach Preis ab 0.43 EUR bis 1.52 EUR

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TSM055N03EPQ56 RLG TSM055N03EPQ56 RLG Hersteller : Taiwan Semiconductor TSM055N03EPQ56_B1710.pdf MOSFETs 30V, 80A, Single N-Channel Power MOSFET
auf Bestellung 9697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.52 EUR
10+1.02 EUR
100+0.76 EUR
500+0.63 EUR
1000+0.54 EUR
2500+0.49 EUR
5000+0.43 EUR
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TSM055N03EPQ56 RLG TSM055N03EPQ56 RLG Hersteller : Taiwan Semiconductor 134tsm055n03epq56_b1710.pdf Trans MOSFET N-CH 30V 80A 8-Pin DFN EP T/R
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TSM055N03EPQ56 RLG TSM055N03EPQ56 RLG Hersteller : Taiwan Semiconductor Corporation TSM055N03EPQ56_B1710.pdf Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH