TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 80A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).