TSM060N03PQ33 Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 62A, SINGLE N-CHANNEL POWER
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
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Technische Details TSM060N03PQ33 Taiwan Semiconductor Corporation
Description: 30V, 62A, SINGLE N-CHANNEL POWER, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Part Status: Active, Packaging: Tape & Reel (TR).