TSM070NB04LCR RLG

TSM070NB04LCR RLG Taiwan Semiconductor Corporation


TSM070NB04LCR_B1804.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
Mindestbestellmenge: 2500
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Technische Details TSM070NB04LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 15A/75A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V.

Weitere Produktangebote TSM070NB04LCR RLG nach Preis ab 0.74 EUR bis 2.46 EUR

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TSM070NB04LCR RLG TSM070NB04LCR RLG Hersteller : Taiwan Semiconductor Corporation TSM070NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NB04LCR RLG TSM070NB04LCR RLG Hersteller : Taiwan Semiconductor 18tsm070nb04lcr_a1712.pdf Trans MOSFET N-CH 40V 15A 8-Pin PDFN EP T/R
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TSM070NB04LCR RLG Hersteller : Taiwan Semiconductor TSM070NB04LCR_B1804-1480668.pdf MOSFET 40V 75A Single N-Chan Pwr MOSFET
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