TSM070NB04LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
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Technische Details TSM070NB04LCR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM070NB04LCR RLG nach Preis ab 0.77 EUR bis 2.59 EUR
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TSM070NB04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 15A/75A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM070NB04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.59 EUR |
| 13+ | 1.64 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.77 EUR |