TSM070NB04LCR RLG

TSM070NB04LCR RLG Taiwan Semiconductor Corporation


TSM070NB04LCR_B1804.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.59 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500
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Technische Details TSM070NB04LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 15A/75A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TSM070NB04LCR RLG nach Preis ab 0.65 EUR bis 2.18 EUR

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TSM070NB04LCR RLG TSM070NB04LCR RLG Hersteller : Taiwan Semiconductor Corporation TSM070NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 15A/75A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 2151 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.38 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NB04LCR RLG TSM070NB04LCR RLG Hersteller : Taiwan Semiconductor TSM070NB04LCR_B1804.pdf MOSFETs 40V, 75A, Single N-Channel Power MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH