TSM076NH04DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 40V 14A 8PDFNU, Part Status: Active, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 55.6W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).