TSM080NB03CR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.45 EUR |
5000+ | 0.43 EUR |
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Technische Details TSM080NB03CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V.
Weitere Produktangebote TSM080NB03CR RLG nach Preis ab 0.43 EUR bis 1.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM080NB03CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 14A/59A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM080NB03CR RLG | Hersteller : Taiwan Semiconductor | MOSFET 30V, 59A, Single N-Channel Power MOSFET |
auf Bestellung 2459 Stücke: Lieferzeit 10-14 Tag (e) |
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