TSM080NB03CR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
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Technische Details TSM080NB03CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V.
Weitere Produktangebote TSM080NB03CR RLG nach Preis ab 0.51 EUR bis 1.43 EUR
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TSM080NB03CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 14A/59A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM080NB03CR RLG | Taiwan Semiconductor |
MOSFET 30V, 59A, Single N-Channel Power MOSFET |
auf Bestellung 2459 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM080NB03CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 18+ | 1.21 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| TSM080NB03CR RLG |
|
Hersteller: Taiwan Semiconductor
MOSFET 30V, 59A, Single N-Channel Power MOSFET
MOSFET 30V, 59A, Single N-Channel Power MOSFET
auf Bestellung 2459 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.43 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.54 EUR |
| 5000+ | 0.51 EUR |