TSM080NB03CR RLG Taiwan Semiconductor Corporation


TSM080NB03CR_A1910.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM080NB03CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 14A/59A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V.

Weitere Produktangebote TSM080NB03CR RLG nach Preis ab 0.51 EUR bis 2.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor TSM080NB03CR_A1910.pdf MOSFET 30V, 59A, Single N-Channel Power MOSFET
auf Bestellung 2459 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.43 EUR
10+1.23 EUR
100+0.84 EUR
500+0.71 EUR
1000+0.61 EUR
2500+0.54 EUR
5000+0.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor Corporation TSM080NB03CR_A1910.pdf Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.24 EUR
16+1.39 EUR
50+1.04 EUR
100+0.92 EUR
500+0.71 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
Hersteller: Taiwan Semiconductor
MOSFET 30V, 59A, Single N-Channel Power MOSFET
auf Bestellung 2459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.43 EUR
10+1.23 EUR
100+0.84 EUR
500+0.71 EUR
1000+0.61 EUR
2500+0.54 EUR
5000+0.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.24 EUR
16+1.39 EUR
50+1.04 EUR
100+0.92 EUR
500+0.71 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH