TSM085P03CV RGG

TSM085P03CV RGG Taiwan Semiconductor Corporation


TSM085P03CV_A1605.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 30V 64A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V
auf Bestellung 25000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
10000+0.49 EUR
15000+0.48 EUR
Mindestbestellmenge: 5000
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Technische Details TSM085P03CV RGG Taiwan Semiconductor Corporation

Description: MOSFET P-CH 30V 64A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V.

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TSM085P03CV RGG TSM085P03CV RGG Hersteller : Taiwan Semiconductor TSM085P03CV_A1605.pdf MOSFETs -30, -64, Single P-Channel
auf Bestellung 9082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.17 EUR
100+0.81 EUR
500+0.65 EUR
1000+0.55 EUR
5000+0.52 EUR
Mindestbestellmenge: 2
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TSM085P03CV RGG TSM085P03CV RGG Hersteller : Taiwan Semiconductor Corporation TSM085P03CV_A1605.pdf Description: MOSFET P-CH 30V 64A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3234 pF @ 15 V
auf Bestellung 27804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.61 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH