TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 40V 10A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
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Technische Details TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Weitere Produktangebote TSM110NB04DCR RLG nach Preis ab 0.76 EUR bis 1.44 EUR
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TSM110NB04DCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM110NB04DCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 14882 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM110NB04DCR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R |
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