TSM150NB04DCR RLG Taiwan Semiconductor Corporation
                                                                                Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
            
                    Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 11+ | 1.69 EUR | 
| 13+ | 1.39 EUR | 
| 100+ | 1.08 EUR | 
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Technische Details TSM150NB04DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active. 
Weitere Produktangebote TSM150NB04DCR RLG nach Preis ab 0.67 EUR bis 1.7 EUR
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        TSM150NB04DCR RLG | Hersteller : Taiwan Semiconductor | MOSFETs 40V, 38A, Dual N-Channel Power MOSFET | 
                             auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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        TSM150NB04DCR RLG | Hersteller : Taiwan Semiconductor Corporation | 
                                    Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active  | 
        
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