TSM150NB04LCR RLG

TSM150NB04LCR RLG Taiwan Semiconductor Corporation


TSM150NB04LCR_B1804.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
Mindestbestellmenge: 10
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Technische Details TSM150NB04LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 10A/41A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V.

Weitere Produktangebote TSM150NB04LCR RLG

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TSM150NB04LCR RLG TSM150NB04LCR RLG Hersteller : Taiwan Semiconductor tsm150nb04lcr_b1804.pdf Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R
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TSM150NB04LCR RLG TSM150NB04LCR RLG Hersteller : Taiwan Semiconductor Corporation TSM150NB04LCR_B1804.pdf Description: MOSFET N-CH 40V 10A/41A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V
Produkt ist nicht verfügbar
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TSM150NB04LCR RLG Hersteller : Taiwan Semiconductor TSM150NB04LCR_B1804-1480652.pdf MOSFET 40V 41A 15mOhm N-Chan Pwr MOSFET
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TSM150NB04LCR RLG Hersteller : TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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