TSM160N10LCR Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 46A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 46A (Tc)
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Technische Details TSM160N10LCR Taiwan Semiconductor Corporation
Description: 100V, 46A, SINGLE N-CHANNEL POWE, Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Power Dissipation (Max): 2.6W (Ta), 83W (Tc), Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 46A (Tc).