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TSM170N06PQ56 RLG

TSM170N06PQ56 RLG Taiwan Semiconductor Corporation

TSM170N06PQ56_A1608.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.59 EUR
5000+0.53 EUR
7500+0.45 EUR
Mindestbestellmenge: 2500
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Technische Details TSM170N06PQ56 RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 60V 44A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V, Power Dissipation (Max): 73.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V.

Weitere Produktangebote TSM170N06PQ56 RLG nach Preis ab 0.63 EUR bis 1.74 EUR

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TSM170N06PQ56 RLG TSM170N06PQ56 RLG Hersteller : Taiwan Semiconductor TSM170N06PQ56_A1608.pdf MOSFETs 60V, 44A, Single N-Channel Power MOSFET
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.73 EUR
10+1.42 EUR
25+1.41 EUR
100+1.25 EUR
500+0.98 EUR
1000+0.74 EUR
2500+0.63 EUR
Mindestbestellmenge: 2
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TSM170N06PQ56 RLG TSM170N06PQ56 RLG Hersteller : Taiwan Semiconductor Corporation TSM170N06PQ56_A1608.pdf Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V
auf Bestellung 16096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
14+1.35 EUR
100+1.12 EUR
500+0.8 EUR
1000+0.65 EUR
Mindestbestellmenge: 11
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TSM170N06PQ56 RLG TSM170N06PQ56 RLG Hersteller : Taiwan Semiconductor 11173213477717180tsm170n06pq56_a1608.pdf Trans MOSFET N-CH 60V 8A 8-Pin PDFN EP T/R
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