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TSM180N03PQ33 RGG

TSM180N03PQ33 RGG Taiwan Semiconductor Corporation

TSM180N03PQ33_B1710.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 25A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.08)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM180N03PQ33 RGG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 25A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.08), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.

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TSM180N03PQ33 RGG TSM180N03PQ33 RGG Hersteller : Taiwan Semiconductor TSM180N03PQ33_B1710.pdf MOSFETs 30V, 25A, Single N-Channel Power MOSFET
auf Bestellung 11864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.25 EUR
5000+0.23 EUR
10000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TSM180N03PQ33 RGG TSM180N03PQ33 RGG Hersteller : Taiwan Semiconductor Corporation TSM180N03PQ33_B1710.pdf Description: MOSFET N-CH 30V 25A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.08)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 9888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.62 EUR
100+0.43 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
TSM180N03PQ33 RGG TSM180N03PQ33 RGG Hersteller : Taiwan Semiconductor 138tsm180n03pq33_b1710.pdf Trans MOSFET N-CH 30V 25A 8-Pin DFN EP T/R
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