TSM180N03PQ33 RGG Taiwan Semiconductor Corporation


TSM180N03PQ33_B1710.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 25A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.08)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.27 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM180N03PQ33 RGG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 25A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.08), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.

Weitere Produktangebote TSM180N03PQ33 RGG nach Preis ab 0.29 EUR bis 1.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TSM180N03PQ33 RGG TSM180N03PQ33 RGG Taiwan Semiconductor Corporation TSM180N03PQ33_B1710.pdf Description: MOSFET N-CH 30V 25A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.08)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 9857 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
27+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.31 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM180N03PQ33 RGG TSM180N03PQ33 RGG Taiwan Semiconductor TSM180N03PQ33_B1710.pdf MOSFETs 30V, 25A, Single N-Channel Power MOSFET
auf Bestellung 11517 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.37 EUR
10+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.35 EUR
5000+0.3 EUR
10000+0.29 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM180N03PQ33 RGG TSM180N03PQ33_B1710.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 25A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.08)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 9857 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.31 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM180N03PQ33 RGG TSM180N03PQ33_B1710.pdf
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 25A, Single N-Channel Power MOSFET
auf Bestellung 11517 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.37 EUR
10+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.35 EUR
5000+0.3 EUR
10000+0.29 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH