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TSM180P03CS RLG

TSM180P03CS RLG Taiwan Semiconductor Corporation

TSM180P03CS_A14.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM180P03CS RLG Taiwan Semiconductor Corporation

Description: MOSFET P-CHANNEL 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V.

Weitere Produktangebote TSM180P03CS RLG nach Preis ab 0.38 EUR bis 1.14 EUR

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TSM180P03CS RLG TSM180P03CS RLG Hersteller : Taiwan Semiconductor TSM180P03CS_A14.pdf MOSFETs -30V, -10A, Single P-Channel Power MOSFET
auf Bestellung 5807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.09 EUR
10+1.03 EUR
100+0.76 EUR
500+0.64 EUR
1000+0.54 EUR
2500+0.48 EUR
5000+0.38 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TSM180P03CS RLG TSM180P03CS RLG Hersteller : Taiwan Semiconductor Corporation TSM180P03CS_A14.pdf Description: MOSFET P-CHANNEL 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 4038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
17+1.08 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
TSM180P03CS RLG TSM180P03CS RLG Hersteller : Taiwan Semiconductor tsm180p03cs_a14.pdf Trans MOSFET P-CH 30V 10A 8-Pin SOP T/R
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TSM180P03CS RLG TSM180P03CS RLG Hersteller : TAIWAN SEMICONDUCTOR TSM180P03CS_A14.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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