TSM190N08CZ Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: 75V, 190A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
Power Dissipation (Max): 2W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 30 V
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Technische Details TSM190N08CZ Taiwan Semiconductor Corporation

Description: 75V, 190A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V, Power Dissipation (Max): 2W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 30 V.

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TSM190N08CZ TSM190N08CZ Hersteller : Taiwan Semiconductor TSM190N08_B15-1918700.pdf MOSFET 75V, 190A, Single N-Channel Power MOSFET
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