TSM1NB60CH C5G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO251
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 75+ | 0.76 EUR |
| 150+ | 0.68 EUR |
| 525+ | 0.56 EUR |
| 1050+ | 0.5 EUR |
| 2025+ | 0.46 EUR |
| 5025+ | 0.42 EUR |
| 10050+ | 0.39 EUR |
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Technische Details TSM1NB60CH C5G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO251, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote TSM1NB60CH C5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TSM1NB60CH C5G | Hersteller : Taiwan Semiconductor |
MOSFETs 600V, 1A, Single N-Channel Power MOSFET |
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