TSM1NB60LCW RPG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 600V, 0.55A, SINGLE N-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V
Power Dissipation (Max): 10.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.51 EUR |
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Technische Details TSM1NB60LCW RPG Taiwan Semiconductor Corporation
Description: 600V, 0.55A, SINGLE N-CHANNEL PO, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V, Power Dissipation (Max): 10.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V.
Weitere Produktangebote TSM1NB60LCW RPG nach Preis ab 0.57 EUR bis 1.97 EUR
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TSM1NB60LCW RPG | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 0.55A, SINGLE N-CHANNEL PO Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V Power Dissipation (Max): 10.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V |
auf Bestellung 3745 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM1NB60LCW RPG | Hersteller : Taiwan Semiconductor |
MOSFETs 600V, 0.55A, Single N-Channel High Voltage MOSFETs |
Produkt ist nicht verfügbar |