TSM200N03DPQ33 Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM200N03DPQ33 Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 30V 20A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3x3).

Weitere Produktangebote TSM200N03DPQ33

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TSM200N03DPQ33 TSM200N03DPQ33 Hersteller : Taiwan Semiconductor TSM200N03D_B1710-1918822.pdf MOSFET 30V, 20A, Dual N-Channel Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH