TSM2301ACX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
| 15000+ | 0.25 EUR |
| 30000+ | 0.24 EUR |
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Technische Details TSM2301ACX RFG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM2301ACX RFG nach Preis ab 0.36 EUR bis 1.3 EUR
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TSM2301ACX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 2.8A SOT23 Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
auf Bestellung 92293 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM2301ACX RFG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem b?dzie: TSM650P02CX; TSM2301ACX RFG TTSM2301cx Anzahl je Verpackung: 100 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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