| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.27 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details TSM2301ACX RFG Taiwan Semiconductor
Description: MOSFET P-CHANNEL 20V 2.8A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V.
Weitere Produktangebote TSM2301ACX RFG nach Preis ab 0.27 EUR bis 1.57 EUR
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TSM2301ACX RFG | Taiwan Semiconductor |
 P Channel Power MOSFET |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2301ACX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM2301ACX RFG | Taiwan Semiconductor |
P Channel Power MOSFET |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2301ACX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
auf Bestellung 56753 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM2301ACX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 7.2nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 5429 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TSM2301ACX RFG | Taiwan Semiconductor Co., Ltd. |
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem b?dzie: TSM650P02CX; TSM2301ACX RFG TTSM2301cx Anzahl je Verpackung: 100 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM2301ACX RFG |
|
Hersteller: Taiwan Semiconductor
P Channel Power MOSFET
P Channel Power MOSFET
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18000+ | 0.27 EUR |
| TSM2301ACX RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| 9000+ | 0.32 EUR |
| TSM2301ACX RFG |
|
Hersteller: Taiwan Semiconductor
P Channel Power MOSFET
P Channel Power MOSFET
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.88 EUR |
| 6000+ | 0.8 EUR |
| 12000+ | 0.73 EUR |
| TSM2301ACX RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
auf Bestellung 56753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 22+ | 0.98 EUR |
| 50+ | 0.71 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| TSM2301ACX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 5429 Stücke:
Lieferzeit 14-21 Tag (e)
| TSM2301ACX RFG |
|
Hersteller: Taiwan Semiconductor Co., Ltd.
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem b?dzie: TSM650P02CX; TSM2301ACX RFG TTSM2301cx
Anzahl je Verpackung: 100 Stücke
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem b?dzie: TSM650P02CX; TSM2301ACX RFG TTSM2301cx
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.48 EUR |