TSM230N06CP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.43 EUR |
| 7500+ | 0.41 EUR |
| 12500+ | 0.39 EUR |
| 17500+ | 0.38 EUR |
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Technische Details TSM230N06CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote TSM230N06CP ROG nach Preis ab 0.41 EUR bis 1.8 EUR
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TSM230N06CP ROG | Taiwan Semiconductor |
MOSFETs 60V, 50A, Single N-Channel Power MOSFET |
auf Bestellung 3148 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM230N06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 34A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
auf Bestellung 28534 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM230N06CP ROG | Taiwan Semiconductor Co., Ltd. |
Transistor N-Channel MOSFET; 60V; 20V; 28mOhm; 50A; 53W; -55°C ~ 150°C; TSM230N06CP ROG TSM230N06CP TTSM230n06cp Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM230N06CP ROG |
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Hersteller: Taiwan Semiconductor
MOSFETs 60V, 50A, Single N-Channel Power MOSFET
MOSFETs 60V, 50A, Single N-Channel Power MOSFET
auf Bestellung 3148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| 2500+ | 0.46 EUR |
| 5000+ | 0.41 EUR |
| TSM230N06CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Description: MOSFET N-CHANNEL 60V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 28534 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.8 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| TSM230N06CP ROG |
|
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 60V; 20V; 28mOhm; 50A; 53W; -55°C ~ 150°C; TSM230N06CP ROG TSM230N06CP TTSM230n06cp
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 28mOhm; 50A; 53W; -55°C ~ 150°C; TSM230N06CP ROG TSM230N06CP TTSM230n06cp
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 1.25 EUR |