TSM2312CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details TSM2312CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V.
Weitere Produktangebote TSM2312CX RFG nach Preis ab 0.41 EUR bis 1.27 EUR
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TSM2312CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Polarisation: unipolar Kind of package: tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±8V Case: SOT23 |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 4.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
auf Bestellung 152875 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM2312CX RFG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R TSM2312CX RFG TTSM2312cx Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R |
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R |
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor |
MOSFETs 20V, 4.9A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |