TSM2312CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details TSM2312CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM2312CX RFG nach Preis ab 0.42 EUR bis 1.27 EUR
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TSM2312CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 4.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
auf Bestellung 152875 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM2312CX RFG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R TSM2312CX RFG TTSM2312cx Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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