TSM250NB06CV RGG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.39 EUR |
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Technische Details TSM250NB06CV RGG Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, Power Dissipation (Max): 1.9W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (3.15x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V.
Weitere Produktangebote TSM250NB06CV RGG nach Preis ab 0.41 EUR bis 1.09 EUR
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TSM250NB06CV RGG | Hersteller : Taiwan Semiconductor Corporation |
Description: 60V, 28A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Power Dissipation (Max): 1.9W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM250NB06CV RGG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 28A, Single N-Channel Power MOSFET |
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